Hynix Semiconductor Inc. and Grandis Inc. have signed a long-term license agreement for memory products incorporating Grandis’ patents and intellectual property in spin-transfer torque random access memory (STT-RAM). The two companies have also entered into a collaborative agreement to jointly integrate Grandis’ fundamental STT-RAM technology into Hynix’s future memory products.

STT-RAM is a next-generation, non-volatile memory (NVM) solution that overcomes the limitations of conventional magnetic RAM (MRAM) technologies. While existing memory technologies prove to be very difficult for manufacturing beyond the 40-nm process node, STT-RAM shows excellent scalability with shrinking design rules, which translates to greater density and, ultimately, lower cost per die. STT-RAM also consumes less power than existing mainstream memories, and provides unlimited endurance as well as fast read/write capability.

Technical teams from both companies will work together to implement Grandis’ STT-RAM technology, including magnetic tunnel junction (MTJ) materials and structures optimized for low writing current and high thermal stability, integration of MTJ and CMOS processes and design of STT-RAM cells and memory arrays.