Micron Technology, Inc. is sampling 4 gigabyte (GB) DDR3 modules, designed using 2 gigabit (Gb) components, to provide the industry’s highest density DDR3 modules for notebook computers. The fast speeds, high-density and low-power of Micron’s portfolio of DDR3 modules – ranging in density from 512 megabytes (MBs) to now 4 GBs – allow these systems and applications to perform more effectively and utilize power more efficiently.

The company also announced it has received Intel’s validation on 512 MB, 1 GB and 2 GB DDR3 notebook modules for the upcoming Intel® Centrino® 2 processor technology mobile platform. Micron’s 4 GB DDR3 notebook modules are currently going through the validation process at Intel. To see a complete list of products validated on Intel’s chipset platform and to learn more about these products go to www.micron.com/ddr3sodimm.

The DDR3 modules support data rates of up to 1333 megabits per second, enabling better system and graphics performance, which provides for a more interactive user experience. DDR3 supply voltage operates at 1.5-volts in comparison to DDR2’s 1.8-volts, reducing power consumption by up to 30 percent.

512 MB, 1 GB and 2 GB modules are in mass production now, with its 2 Gb-based DDR3 4 GB modules expected to be in mass production in Q2 2008.