Flash memory, NOR and NAND types, is non-volatile. The major use of this type of memory is in portable devices. The PC sector is just starting to make use of NAND Flash Memory.
Non-volatile means that the device retains information that is being stored on it while it is turned off. It is this feature that is driving it's use and implementation in a rapidly growing range on products.
NAND flash memory technology in the PC platform received a boost with the formation of the Non-Volatile Memory Host Controller Interface (NVMHCI) Working Group. The NVMHCI Working Group is chaired by Intel Corporation with core contributors including Dell Inc. and Microsoft Corp.
NVMHCI will provide a standard software programming interface for nonvolatile memory subsystems. The interface would be used by operating system drivers to access NAND flash memory storage in applications such as hard drive caching and solid-state drives.
STMicroelectronics, Intel and Francisco Partners have entered into a definitive agreement to create a new independent semiconductor company from the key assets of businesses which last year generated approximately $3.6 billion in combined annual revenue. The new company's strategic focus will be on supplying flash memory solutions for a variety of consumer and industrial devices, including cellular phones, MP3 players, digital cameras, computers and other high-tech equipment.
Hynix Semiconductor Inc. has entered into a strategic partnership with IMEC, Europe’s leading independent nanoelectronics research center, to perform research and development for the (sub)-32nm memory process generations.
As part of the agreement, Hynix will collaborate within IMEC’s advanced lithography program addressing both immersion and EUV lithography challenges and within IMEC’s non-volatile memory program. The latter program has gained significantly increased momentum in the past year by expanding its floating gate and nitride memory activity lines into advanced material research, including exploration of advanced high-k dielectrics. From June 2007 onwards, a team of researchers of Hynix will reside at IMEC to closely collaborate with IMEC’s researchers in the abovementioned areas. In this way, they will build up fundamental understanding and develop solutions for the 32nm and beyond DRAM and Flash memory process generations.
Microsoft and SanDisk, Developement Agreement
Microsoft and SanDisk® Corporation have signed an agreement to deliver a next-generation software and hardware solution to place application programs and personal customization on USB flash drives and flash memory cards, expanding on and replacing SanDisk’s existing U3™ Smart Technology.
Under the terms of the agreement, Microsoft will develop a new software and SanDisk will develop new hardware capabilities, including the addition of TrustedFlash™ security technology. SanDisk will incorporate the combined software and hardware solution on removable flash memory cards and Cruzer® USB flash drives. The new offering is expected to be commercially available starting in the second half of 2008.
Multi-Level Cell NAND Flash Memory
Intel Corporation and Micron Technology, Inc., today announced they are sampling industry-leading 50 nanometer (nm) multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies.
The new MLC NAND flash memory components feature a world-class die and cell size ideally suited for use in today's computing and consumer electronics devices that are increasingly smaller and more efficient themselves. The 50nm MLC technology, sampling at a 16 gigabit (Gb) die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4 Gb die density.
New NAND Flash Technology 
A new three dimensional memory cell array structure that enhances cell density and data capacity without relying on advances in process technology, and with minimal increase in the chip die size, from the Toshiba Corporation. In the new structure, pillars of stacked memory elements pass vertically through multi-stacked layers of electrode material and utilize shared peripheral circuits. The innovative design is a potential candidate technology for meeting future demand for higher density NAND flash memory.
New HD NAND Flash Memory A new series of embedded NAND Flash memories for mobile phones offering both a configurable single-level cell (SLC) memory area and a multi-level cell (MLC) memory area, allowing applications and data to be stored on the same chip, from Toshiba Corporation. This development allows cell phone manufacturers that have been using SLC NAND with a standard NAND interface in multi-chip packages (MCPs) to easily take advantage of the lower cost and higher density advantages of MLC NAND while optimizing NAND performance to meet their requirements.
Until now, industrial lasers have been able to perform only one specific task effectively – they are generally good at either hardening, cutting or welding metal. Moreover, they are often bulky and unwieldy. Researchers from the Fraunhofer Institute for Material and Beam Technology IWS in Dresden will be presenting a real multi-talent at Laser2007 in Munich: a fiber laser system that is capable of hardening, cutting, and even welding if required.
Earthrace continues its quest to break the world record for circumnavigation of the globe by a powerboat. Earthrace entered the Red Sea May 22 2007, with a Northern path towards the Suez Canal.
The Earthrace powerboat began its record attempt on April 7 from San Diego, California and must finish back in San Diego on or before 21 June to break the record of 75 days – set by the British boat Cable & Wireless in 1998.
A new breakthrough in hydrogen storage technology could remove a key barrier to widespread uptake of non-polluting cars that produce no carbon dioxide emissions.
UK scientists have developed a compound of the element lithium which may make it practical to store enough hydrogen on-board fuel-cell-powered cars to enable them to drive over 300 miles before refuelling. Achieving this driving range is considered essential if a mass market for fuel cell cars is to develop in future years, but has not been possible using current hydrogen storage technologies.