NAND-Flash-Based Solid-State Drives (SSDs), TAEC

2-Rank 8GB DDR2 RDIMM, Hynix 2-Rank 8GB PC2-4200 RDIMM, featuring MetaRAM’s MetaSDRAM™ technology. The HYMP31GP72CUP4-C6, from Hynix Semiconductor Inc., effectively doubles the memory capacity of AMD Opteron-based and Intel Xeon-based systems, while lowering power consumption by up to 30% when compared to industry standard 8GB 4-Rank or 4GB 2-Rank modules.
DDR2 800MHz FB-DIMMs, Super Talent Technology DDR2-800 Fully Buffered DIMMs from Super Talent Technology. These FB-DIMMs are 100% compliant with JEDEC specifications. They are designed to offer the best reliability, scalability and performance in today’s leading edge servers and workstations. Two 800MHz FB-DIMMs are shipping now: T800FB1G 1GB DDR2-800 FB-DIMM for Intel®, sixteen 64Mx8 RAMs T800FB1GAP 1GB DDR2-800 FB-DIMM for Apple, sixteen 64Mx8 RAMs
Details, DDR2 MetaSDRAM™ MetaSDRAM, underpinned by more than 50 pending patents, solves the memory capacity problem affordably by enabling multiple mainstream DRAMs to look like a larger capacity DRAM to the CPU. The MetaSDRAM™ chipset combines four separate 1Gb DDR2 SDRAMs into a single virtual 4Gb DDR2 SDRAM which acts exactly as a monolithic 4Gb DDR2 MetaSDRAM would. The DDR2 chipset is optimized for low power and high performance and features include:
DDR2 MetaSDRAM™, From MetaRAM MetaRAM has launched of DDR2 MetaSDRAM™, a new memory technology that significantly increases server and workstation performance while dramatically decreasing the cost of high-performance systems. Using MetaRAM’s DDR2 MetaSDRAM, a quarter-terabyte, four-processor server with 16 cores starts at under $50,000, up to a 90 percent reduction in system cost – all without any system modifications. MetaSDRAM, designed for AMD Opteron™ and Intel® Xeon®-based systems, is currently available in R-DIMMs from Hynix Semiconductor, Inc. and SMART Modular Technologies. Servers and workstations from Appro, Colfax International, Rackable Systems and Verari Systems are expected in the first quarter of 2008.
NAND Flash Memory Production Joint Venture Toshiba Corporation and SanDisk® (NASDAQ: SNDK) have signed a non-binding memorandum of understanding to form a new production joint venture and construct a new 300 millimeter (mm) wafer fab in Japan to meet the anticipated future demand for NAND flash memory. The two companies will now select the plant site, targeting a production start-up date in 2010. Fifty percent of the new fab's production capacity will be allocated to the new joint venture. Within the joint venture the parties will equally share wafer output and funding for the equipment. The remaining 50% of the Fab's production capacity will be managed by Toshiba and half of the output will be provided to SanDisk on a committed foundry basis. The agreement provides SanDisk an option to convert its committed foundry capacity into the joint venture or to convert to a non-committed foundry arrangement. Construction of the new facility is expected to start in calendar year 2009.